inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1525 description high dc current gain : h fe = 1000(min.)@ i c = 20a collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) applications designed for high current switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 30 a i b b base current- continuous 5 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1525 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma, i b = 0 100 v v ce (sat) collector-emitter saturation voltage i c = 20a, i b = 0.2a 1.5 v v be (sat) base-emitter saturation voltage i c = 20a, i b = 0.2a 2.5 v i cbo collector cutoff current v cb = 100v, i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v, i c = 0 10 ma h fe-1 dc current gain i c = 20a; v ce = 5v 1000 h fe-2 dc current gain i c = 30a; v ce = 5v 200 v ecf c-e diode forward voltage i f = 10a 3.0 v f t current-gain?bandwidth product i c = 1a; v ce = 5v 10 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 500 pf switching times t on turn-on time 1.5 s t stg storage time 10 s t f fall time i b1 = -i b2 = 10ma; v cc = 50v; r l = 10 1.5 s isc website www.iscsemi.cn
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